Fabrication of Thin-Film Transistors Using Large-Area Exfoliation of Single-Crystal MoS2 Layers and Inkjet-Printing

摘要

The fabrication and characterization of molybdenum disulfide (MoS2) thin-film transistors (TFTs) using a novel exfoliation approach and inkjet-printing was demonstrated. The exfoliation technique employed a water-dissolvable adhesive to separate multi-layer MoS2 regions of $gt 100mu m^{2}$. An ink-jet printed silver ink was used to pattern metallic electrodes on the semiordered MoS2 layers to fabricate arrays of TFT devices on a thermal oxide gate dielectric. The fabricated TFTs, having a common doped-Si gate electrode, possessed field-effect mobility of 28 cm$^{2} V^{-1} s^{-1}$, threshold voltages of -40V, sub-threshold swing 1.5 V/decade, and On/Off current ratio of 10⁶.