Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications

摘要

3D sequential integration is shown to be compatible with a back gate implementation suitable for dynamic V_thtuning of the FDSOI top tier devices. The back gate is inserted seamlessly into the 3D sequential process flow during the top Si layer transfer, providing a close proximity to the top tier device, as well as a uniform and high quality thermal back oxide. A threshold voltage tuning of ~103mV/V and ~139mV/V is obtained in p-and nMOS top tier junction-less devices, respectively, over a back gate bias range of +/-2V. BTI reliability measurements show no detrimental impact of the back gate bias. Back-gating can therefore be used to enhance the ION performance with no reliability penalty. The buried metal line is also shown to lower crosstalk by metal shielding insertion between top and bottom tier metal lines, with a reduction larger than 10dB up to 45GHz.