首页> 外文会议>Symposium on VLSI Circuits >A 10-MHz 14.3W/mm2 DAB Hysteretic Control Power Converter Achieving 2.5W/247ns Full Load Power Flipping and above 80 Efficiency in 99.9 Power Range for 5G IoTs
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A 10-MHz 14.3W/mm2 DAB Hysteretic Control Power Converter Achieving 2.5W/247ns Full Load Power Flipping and above 80 Efficiency in 99.9 Power Range for 5G IoTs

机译:适用于5G IoT的10MHz 14.3W / mm 2 DAB磁滞控制电源转换器可实现2.5W / 247ns满载功率翻转并在99.9%的功率范围内实现80%以上的效率

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A double adaptive bound (DAB) hysteretic control power converter is designed for 5G IoTs, which require nanosecond power load flipping and high efficiency across full power range. In response to 1A/3ns load step-up/step-down, it achieves 1% tsettle of 247ns/387ns, thanks to the DAB control. This is 6× faster than the best of the arts on 0.18μm CMOS. A synchronized DCR offset cancellation scheme improves VO regulation accuracy by 10×. As power scales from full to ultra-light load, the controller self-reconfigures to remove redundant controller loss and facilitate adaptive system power delivery. It achieves >80% efficiency over 99.9% of 2.5W full power range. Highly efficient design leads to the highest reported chip power density of 14.3W/mm2.
机译:针对5G物联网设计了双自适应界(DAB)磁滞控制功率转换器,该转换器需要纳秒级的功率负载翻转和整个功率范围内的高效率。响应于1A / 3ns的负载升压/降压,得益于DAB控制,它实现了247ns / 387ns的1%抖动。这比0.18μmCMOS上最好的技术快6倍。同步DCR偏移消除方案将VO调节精度提高了10倍。当功率从满负载扩展到超轻负载时,控制器会自我重新配置,以消除冗余的控制器损耗并促进自适应系统功率的传输。在2.5W全功率范围的99.9%的范围内,它可实现> 80%的效率。高效的设计导致报告的最高芯片功率密度为14.3W / mm 2

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