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Characterization of the activation of yttrium-based getter films by electrical measurements and ion-beam analyses

机译:通过电学测量和离子束分析表征钇基吸气膜的活化

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Gettering properties of thin films of pure yttrium and yttrium-based alloys have been studied for application to MEMS vacuum packaging at the wafer level. Thin films of Y, Zr-Y, Ti-Y and V-Y were co-evaporated under ultra-high vacuum. It is demonstrated that the sheet resistance measured by 4-probes technique before and after activation at 250°C gives a good estimation of the oxygen sorption ability determined by NRA. Pure yttrium has been found to be highly reactive after deposition (sheet resistance increases by 40% after 1 month in air) but poorly efficient in oxygen trapping after activation. Conversely, the sorption ability of Y-V, Y-Zr and Y-Ti alloys is extremely high and increases with the yttrium content in the film. The bests results for sorption are obtained with Y-V (2.7 1022 atom/cm3 for Y44V56).
机译:已经研究了纯钇和钇基合金薄膜的吸杂性能,以用于晶圆级的MEMS真空包装。 Y,Zr-Y,Ti-Y和V-Y薄膜在超高真空下共蒸发。证明了在250℃下活化之前和之后通过4-探针技术测量的薄层电阻良好地估计了由NRA确定的氧吸附能力。已发现纯钇在沉积后具有很高的反应性(在空气中放置1个月后,薄层电阻增加40%),但活化后在捕集氧方面的效率很低。相反,Y-V,Y-Zr和Y-Ti合金的吸附能力极高,并且随着膜中钇含量的增加而增加。 Y-V(2.7 10 22 原子/厘米 3 对于Y 44 伏特 56 )。

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