Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging

摘要

The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×10⁹ cm.Hz^1/2W^-1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images were captured using Ge_0.89Sn_0.11 photoconductor at 77 K.