首页> 外文会议>IEEE International Solid- State Circuits Conference >16.8 A 25.4-to-29.5GHz 10.2mW Isolated Sub-Sampling PLL Achieving -252.9dB Jitter-Power FoM and -63dBc Reference Spur
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16.8 A 25.4-to-29.5GHz 10.2mW Isolated Sub-Sampling PLL Achieving -252.9dB Jitter-Power FoM and -63dBc Reference Spur

机译:16.8 A 25.4至29.5GHz 10.2mW隔离式子采样PLL,可实现-252.9dB抖动功率FoM和-63dBc参考杂散

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Recent mm-wave PLLs have explored different architectures to enhance their jitter performance at low power. Without noisy loop components, the injection-locked PLL in [1] using a GHz reference (REF=2.25GHz) can effectively suppress the integrated jitter (86fsrms), resulting in a better jitter-power FoM (-247.2dB). Yet, high-frequency REF injection leads to large spur (-32dBc), entailing continuous frequency tracking to withstand the PVT variations. Also, at the system level, the GHz REF has to be generated on-chip (i.e. cascaded PLLs). The power overhead, e.g., additional 20mW in [2], and unwanted coupling between the two VCOs become inevitable. To this end, direct-synthesis mm-wave PLLs using a MHz REF are of higher interest, despite the challenge of a large division ratio (N). An example is a Type-II mm-wave PLL reported in [3] that achieves 115fsrms integrated jitter, but the involved divider, charge pump (CP), and VCO totally draw 31mW to suppress the in-band and out-of-band phase noise (PN).
机译:最近的毫米波PLL已经探索了不同的体系结构,以增强其低功耗时的抖动性能。由于没有噪声环路分量,[1]中使用GHz参考(REF = 2.25GHz)的注入锁定PLL可以有效抑制集成抖动(86fs)。 rms ),从而产生更好的抖动功率FoM(-247.2dB)。然而,高频REF注入会导致较大的杂散(-32dBc),需要进行连续的频率跟踪以承受PVT的变化。另外,在系统级,必须在片上(即级联PLL)生成GHz REF。功率开销(例如[2]中额外的20mW)和两个VCO之间的不必要耦合变得不可避免。为此,尽管面临大分频比(N)的挑战,但使用MHz REF的直接合成毫米波PLL引起了人们的极大兴趣。一个例子是[3]中报告的II型毫米波PLL,它实现了115fsrms的集成抖动,但是所涉及的分频器,电荷泵(CP)和VCO总共消耗了31mW的噪声以抑制带内和带外相位噪声(PN)。

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