首页> 外文会议>IEEE International Solid- State Circuits Conference >16.8 A 25.4-to-29.5GHz 10.2mW Isolated Sub-Sampling PLL Achieving -252.9dB Jitter-Power FoM and -63dBc Reference Spur
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16.8 A 25.4-to-29.5GHz 10.2mW Isolated Sub-Sampling PLL Achieving -252.9dB Jitter-Power FoM and -63dBc Reference Spur

机译:16.8 A 25.4至29.5GHz 10.2MW隔离的子采样PLL实现-252.9dB抖动 - 电源FOM和-63DBC参考刺

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Recent mm-wave PLLs have explored different architectures to enhance their jitter performance at low power. Without noisy loop components, the injection-locked PLL in [1] using a GHz reference (REF=2.25GHz) can effectively suppress the integrated jitter (86fsrms), resulting in a better jitter-power FoM (-247.2dB). Yet, high-frequency REF injection leads to large spur (-32dBc), entailing continuous frequency tracking to withstand the PVT variations. Also, at the system level, the GHz REF has to be generated on-chip (i.e. cascaded PLLs). The power overhead, e.g., additional 20mW in [2], and unwanted coupling between the two VCOs become inevitable. To this end, direct-synthesis mm-wave PLLs using a MHz REF are of higher interest, despite the challenge of a large division ratio (N). An example is a Type-II mm-wave PLL reported in [3] that achieves 115fsrms integrated jitter, but the involved divider, charge pump (CP), and VCO totally draw 31mW to suppress the in-band and out-of-band phase noise (PN).
机译:最近的MM-Wave PLL探索了不同的架构,以在低功耗下提高其抖动性能。在没有嘈杂的环路组件的情况下,使用GHz参考(Ref = 2.25GHz)的[1]中的注射锁定PLL可以有效地抑制集成的抖动(86FS rms ),导致更好的抖动功率FOM(-247.2db)。然而,高频REF喷射导致大型涡轮(-32dBc),需要连续频率跟踪以承受PVT变化。此外,在系统级别,必须在片上生​​成GHz REF(即级联PLL)。电力开销,例如[2]中的额外20mW,两个VCO之间的不需要的耦合变得不可避免。为此,尽管大分比比(n)挑战,但使用MHz Ref的直接合成MM波PLL具有更高的兴趣。一个例子是[3]中报告的II型MM-WAVE PLL,实现115FSRMS集成抖动,但涉及的分频器,电荷泵(CP)和VCO完全绘制31MW以抑制带内带和带外带外相位噪声(PN)。

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