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TuA1.1 - Future Roads for Group-IV Defect-enhanced Quantum Dot Light-emitters for Silicon Photonics (Invited)

机译:TuA1.1-用于硅光子学的IV组缺陷增强型量子点发光体的发展之路(已邀请)

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摘要

Optical and optoelectronic properties of all-group-IV quantum dot light-emitters for which the optical properties are enhanced by in-situ implantation of heavy ions (DEQDs) are investigated. Research directions towards more efficient light-emission from DEQDs as well as considerations towards the microstructural investigation of DEQD-defects are elaborated.
机译:研究了通过重离子原位注入(DEQDs)增强了光学性能的全IV族量子点发光体的光学和光电性能。详细阐述了从DEQD发出更有效的发光的研究方向,以及对DEQD缺陷的微观结构研究的考虑。

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