首页> 外文会议>ASME international mechanical engineering congress and exposition >DEGRADATION OF THE STRENGTH OF A GRAIN AND A GRAIN BOUNDARY DUE TO THE ACCUMULATION OF THE STRUCTURAL DEFECTS OF CRYSTAL
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DEGRADATION OF THE STRENGTH OF A GRAIN AND A GRAIN BOUNDARY DUE TO THE ACCUMULATION OF THE STRUCTURAL DEFECTS OF CRYSTAL

机译:由于晶体结构缺陷的积累,晶粒和晶界强度的退化

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Various brittle fractures have been found to occur at grain boundaries in polycrystalline materials. In thin film interconnections used for semiconductor devices, open failures caused by electro- and strain-induced migrations have been found to be dominated by porous random grain boundaries that consist of a lot of defects. Therefore, it is very important to explicate the dominant factors of the strength of a grain boundary in polycrystalline materials for assuring the safe and reliable operation of various products. In this study, both electron back-scatter diffraction (EBSD) analysis and a micro tensile test in a scanning electron microscope was applied to copper thin film which is used for interconnection of semiconductor devices in order to clarify the relationship between the strength and the crystallinity of a grain and a grain boundary quantitatively. Image quality (IQ) value obtained from the EBSD analysis, which indicates the average sharpness of the diffraction pattern (Kikuchi pattern) was applied to the crystallinity analysis. This IQ value indicates the total density of defects such as vacancies, dislocations, impurities, and local strain, in other words, the order of atom arrangement in the observed area in nano-scale. In the micro tensile test system, stress-strain curves of a single crystal specimen and a bicrystal specimen was measured quantitatively. Both transgranular and intergranular fracture modes were observed in the tested specimens with different IQ values. Based to the results of these experiments, it was found that there is the critical IQ value at which the fracture mode of the bicrystal specimen changes from brittle intergranular fracture at a grain boundary to ductile transgranular fracture in a grain. The strength of a grain boundary increases monotonically with IQ value because of the increase in the total number of rigid atomic bonding. On the other hand, the strength of a grain decreases monotonically with the increase of IQ value because the increase in the order of atom arrangement accelerates the movement of dislocations. Finally, it was clarified that the strength of a grain boundary and a grain changes drastically as a strong function of their crystallinity.
机译:已发现在多晶材料的晶界处发生各种脆性断裂。在用于半导体器件的薄膜互连中,已经发现由电和应变引起的迁移引起的开路故障主要由多孔缺陷的晶界控制,该晶界由很多缺陷组成。因此,阐明多晶材料中晶界强度的主要因素对于确保各种产品的安全可靠运行是非常重要的。在这项研究中,电子背散射衍射(EBSD)分析和扫描电子显微镜中的微拉伸试验均应用于铜薄膜,该薄膜用于半导体器件的互连,以阐明强度与结晶度之间的关系。的数量和晶界的数量。从EBSD分析获得的图像质量(IQ)值(表示衍射图(菊池图)的平均清晰度)应用于结晶度分析。该IQ值指示诸如空位,位错,杂质和局部应变的缺陷的总密度,换句话说,以纳米尺度观察区域中原子排列的顺序。在微拉伸试验系统中,定量测量了单晶样品和双晶样品的应力-应变曲线。在具有不同IQ值的被测样品中均观察到了晶间和晶间断裂模式。根据这些实验的结果,发现存在临界IQ值,在该IQ值下,双晶试样的断裂模式从晶界处的脆性晶间断裂变为晶粒中的延性晶间断裂。由于刚性原子键合总数的增加,晶界的强度随IQ值单调增加。另一方面,晶粒的强度随着IQ值的增加而单调降低,这是因为原子排列顺序的增加加速了位错的移动。最后,澄清了晶界和晶粒的强度随着其结晶度的强函数而急剧变化。

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