From FET to SET: A Review

摘要

Scaling has played an important role in reducing the size of the transistor so as to govern the Moore's law, but we cannot always simply scale down the size of the transistor without some deterioration in the performance of the transistor. These effects are termed as short-channel effects such as drain-induced barrier lowering, threshold voltage shift, leakage current, gate-induced drain lowering, hot carrier effect, etc. In this paper, we have reviewed different gated structures such as single gate, double gate, triple gate and gate all around which will control the electrostatic potential in the channel and reduce these short-channel effects. A molecular transistor, i.e., single electron transistor (SET) is also reviewed in this paper; SET shows better performance and reduced short-channel effects. In this molecular structure, either coulomb blockade or tunneling takes place, due to which it has better control over the flow of the electron.