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EUV metal oxide hybrid photoresists: ultra-small structures for high-resolution patterning

机译:EUV金属氧化物混合光致抗蚀剂:用于高分辨率图案化的超小结构

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Extreme ultraviolet (EUV) lithography, using 13.5 nm radiation, is considered one of the most prominent candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap1. Over the past few years, our main effort has been to focus on ZrO_2 and HfO_2 nanoparticle-based photoresists. However, both Zr and Hf are relatively low EUV absorbing metals2, and integration of high EUV absorption elements is considered to be a more promising route to further improve lithographic performance under EUV radiation. Here, we demonstrate novel zinc oxide-based nanoparticle photoresists, possessing small particle size, good solubility in spin-coating solvents, good film-forming abilitie and patterning by incorporating a photo-acid generator or photo-radical generator.
机译:使用13.5nm辐射的极端紫外(EUV)光刻被认为是下一代光刻最突出的候选人之一。根据ITRS RoadMap1,EUV抗蚀剂的主要挑战是同时满足分辨率,LWR(线宽粗糙度)和灵敏度要求。在过去几年中,我们的主要努力一直专注于ZrO_2和基于HFO_2纳米粒子的光致抗蚀剂。然而,Zr和Hf都是相对低的EUV吸收金属2,并且高Euv吸收元件的整合被认为是进一步提高EUV辐射下的平版性能的更有前途的途径。在此,我们证明了新的氧化锌基纳米颗粒光致抗蚀剂,具有小的粒度,通过掺入光酸发生器或光自由基发生器,旋涂溶剂的良好溶解度,良好的成膜和图案化。

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