Wideband Low Noise Amplifier Design for Microwave Frequency using CMOS 65nm Technology

摘要

In this paper, we present analog design of wideband microwave low noise amplifier (LNA) with improvement in the noise figure (NF) and linearity (IIP3). The proposed LNA is cascaded complimentary common gate amplifier with a transformer used as a feedback circuit to improve the bandwidth. Common gate configuration also helps to improve the NF. The proposed circuit is designed in CMOS UMC 65nm technology and simulation study is performed with 1.2V supply. The circuit offers 6.2dB gain and improved linearity of 13.36dBm (IIP3). We also achieved wide microwave range from 5GHz to 19GHz i.e. a band of 15GHz where the noise figure varies between 1.5dB to 3.5dB.