22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

摘要

We demonstrate 22-nm FD-SOI 40Mb embedded MRAM (eMRAM) macros for automotive-grade-l (Auto-G1) MCU applications, highlighting sub-ppm to bit error rate and zero failure after 1M endurance cycles across Auto-G1 operating temperature range (-40~150 °C). Read disturbance characterization with external field also reveals that 40Mb eMRAM macro is capable of active-mode magnetic immunity > 500 Oe at 150 °C. In addition, based on 22-nm eMRAM macro data, we review the effects of magnetic tunnel junction (MTJ) size on reliability and examine scalability of eMRAM technology beyond 22 nm.