A 24.3Me⁻ Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

摘要

This paper presents a 16μm pixel pitch CMOS image sensor exhibiting 24.3Me-full well capacity with a record spatial efficiency of 95ke^-/μm² and high quantum efficiency in near infrared waveband by the introduction of lateral overflow integration trench capacitor on a ~ 10¹²cm^-3 p-type Si substrate. A diffusion of 5mg/dl concentration glucose was clearly visualized by an over 71 dB SNR absorption imaging at 1050nm.