Independent Body-Biasing of P-N Transistors in an 28nm UTBB FD-SOI ULP Near-Threshold Multi-Core Cluster

摘要

Advanced Ultra-Low Power (ULP) computing platforms can be affected by large performance variations. This phenomenon is mainly caused by process and ambient temperature variations, and it is magnified by the strong Temperature Effect Inversion (TEI) that characterizes devices when operating Near-Threshold (NT) in highly scaled nodes. 28nm UTBB FD-SOI technology supports an extended range of both forward and reverse Body-Bias (BB) voltage. This feature can be efficiently used to reduce margins at design time and compensate variations at runtime. In this paper we propose a BB voltage controller capable to independently probe the maximum frequency of P and N transistors, and leverage a BB voltage adjustment to achieve a user-specified target frequency, minimizing the leakage current. Compared to the case where zero BB is applied to the transistors, the controller achieves up to 23% power reduction exploiting the performance increase originated by TEI, further reducing power by 12% with respect to a symmetric BB approach.