A Self-contained Defect-aware Module for Realistic Simulations of LFN, RTN and Time-dependent Variability in FD-SOI Devices and Circuits

摘要

This work presents for the first time a self-contained defect-aware implementation of a Fully Depleted SOI model, capable of reproducing low-frequency noise, random telegraph noise and time-dependent variability effects in transient circuit simulations in the most realistic way. The impact of back-bias and the response under non-stationary bias conditions are also accounted for. Furthermore, a defect-aware transient simulation of the Read Static to Noise Margin for a 6TSRAM cell is also presented, as a circuit case study.