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A CMOS Inverter-Like Class-D/E Power Amplifier with No RF-Choke and No Dead-Time Requirement

机译:无需RF扼流圈且无空载时间要求的CMOS反相器D / E类功率放大器

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This paper presents a CMOS inverter-like Class-D/E switching power amplifier (PA). The proposed amplifier operates in-between Class-E and Class-DE PAs. For proper operation of a Class-E PA, an RF choke (RFC) with large inductance value and high self-resonant frequency is necessary. A Class-DE PA does not require an RFC but requires a dead-time between OFF-ON transitions of the two switches. The proposed PA uses two complementary switches and requires neither an RFC nor a dead-time for its operation. For the same supply voltage and the load resistance, the voltage stress on each switching device in the proposed PA is less than the voltage stress in a Class-E PA. Design and simulation results of a prototype PA at 2.45 GHz with +20 dBm output power are presented.
机译:本文提出了一种类似于CMOS反相器的D / E类开关功率放大器(PA)。拟议的放大器在E类和DE类PA之间工作。为了使E类PA正常工作,必须具有大电感值和高自谐振频率的RF扼流圈(RFC)。 DE级PA不需要RFC,但是在两个开关的OFF-ON转换之间需要停滞时间。拟议的PA使用两个互补的开关,并且既不需要RFC,也不需要停滞时间。对于相同的电源电压和负载电阻,建议的PA中每个开关器件上的电压应力小于E类PA中的电压应力。给出了在2.45 GHz下具有+20 dBm输出功率的原型PA的设计和仿真结果。

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