Double-uniform Schottky diode nonlinear transmission line generating sub-picosecond transients

摘要

We report a double-uniform Schottky diode nonlinear transmission line on gallium arsenide generating a sub-picosecond 7.2 volt transient, doubling the amplitude of the earlier record result. Our optimized diode structure provides both high cut-off frequency, high current saturation limit, and 2:1 capacitance modulation over 8 volts. Current saturation becomes a limiting factor for ultrafast waveforms when the diffusion current through the capacitive depletion region exceeds the current carrying capacity of the unde-pleted resistive region. This work highlights a critical design parameter for frequency generating diodes, providing the ground work for large power increases in ultrafast diode-based circuits.