An exploration of thermo-sensitive electrical parameters to estimate the junction temperature of silicon carbide mosfet

摘要

Compared with the silicon semiconductors, silicon carbide (SiC) metal-oxide-semiconductor Field-Efïect transistor (MOSFET) can operate at higher switching frequency and higher temperature, which makes the junction temperature estimation more significant and challenging. In this paper, different thermo- sensitive electrical parameters (TSEPs) are investigated about their potential to measure the junction temperature of SiC MOSFET. The measurement circuit is introduced for each parameter. According to the results by far, it's really hard to estimate the SiC MOSFET junction temperature by TSEPs because of their non-monotonic dependence or low sensitivity.