Radiation Testing of a Flash NAND Device

摘要

Total ionizing dose and single event effects testing was performed on 4 Gb NAND flash die used in DDC's 69F24G24 flash NAND devices. If the data is regularly refreshed, the devices show good resistance to corrupted bits during total dose irradiation. In the case of heavy ion irradiation, multi-bit upsets could prove problematic to some error correction schemes.