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Zero TCF resonator based on S0 Lamb wave mode in AlN thin plate films

机译:AlN薄膜中基于S 0 Lamb波模式的零TCF谐振器

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Resonator based S0 Lamb wave mode in AlN thin films plate has drawn great attentions thanks to its high phase velocity up to 10 km/s and large electromechanical coupling coefficient (K2). Moreover, this structure allows operation at high temperature conditions. Although several significant research efforts are ongoing to enable AlN-based piezoelectric devices for high temperature applications, an outstanding challenge in AlN-based resonators is to obtain the excellent frequency-temperature stability at operating temperatures [1]. The AlN/SiO2 composite membrane was proposed as a solution for thermal compensation but with the counterpart of degrading K2 and quality factor. In this work we propose an original structure leading to a better compromise between temperature coefficient of frequency (TCF) value and resonator performances.
机译:基于谐振器的S 0 兰姆波模式在ALN薄膜板中,由于其高达10km / s和大型机电耦合系数(K 2 的大型机电耦合系数(K 2) )。此外,该结构允许在高温条件下操作。尽管正在进行几种显着的研究工作来使基于ALN的压电装置用于高温应用,但基于ALN的谐振器中的出色挑战是在操作温度下获得优异的频率温度稳定性[1]。 AlN / SiO 2 复合膜被提出为热补偿的溶液,但是具有降解K 2 和质量因子的对应部分。在这项工作中,我们提出了一种原始结构,导致温度频率系数(TCF)值和谐振器性能之间更好地妥协。

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