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Shot noise in the edge states of 2D topological insulators

机译:二维拓扑绝缘体边缘状态下的散粒噪声

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We calculate the resistance and shot noise in the edge states of a 2D topological insulator that result from the exchange of electrons between these states and conducting puddles in the bulk of the insulator. The two limiting cases where the energy relaxation is either absent or very strong are considered. A finite time of spin relaxation in the puddles is introduced phenomenologically. Depending on this time and on the strength of coupling between the edge states and the puddles, the ratio of the shot noise to the Possonian one ranges from 0 to 1/3, which is in an agreement with the available experimental data.
机译:我们计算2D拓扑绝缘子边缘状态中的电阻和散粒噪声,这是由于这些状态之间的电子交换以及绝缘子主体中的导电水坑引起的。考虑了没有能量弛豫或非常强的两种极限情况。现象学上介绍了水坑中自旋松弛的有限时间。取决于该时间以及边缘状态与水坑之间的耦合强度,散粒噪声与Possonian噪声之比范围为0到1/3,这与可用的实验数据相符。

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