Crystallinity study of Si single crystal stripe on bended glass substrate fabricated by micro-chevron laser beam scanning method

摘要

Si single crystal stripe on bended glass substrate was fabricated by micro-chevron laser beam scanning method. The single crystal stripe had a dimension of about 6 μm in width and several hundreds of microns in length. The crystal quality was evaluated by EBSD, to reveal that the crystal orientation rotated about the transverse direction in forward direction, and only Σ3 and Σ9 coincidence site lattice (CSL) twins transvers the single crystal stripe.