Occurrence and solution to overcome 1 RESET resistance pinning effect in Ti/HfOx based RRAM for low power nonvolatile memory applications

摘要

We have optimized the operation current to obtain stable endurance and retention properties in Ti/HfO-based bipolar RRAM for future low power nonvolatile memory applications. Furthermore, the 1 RESET resistance pinning effect after the FORMING process at lower current is greatly improved by selecting the Ti/HfO thickness ratio in TiN/Ti/HfO/TiN 1T1R RRAM. Thus, in order to achieve the reliable switching at low operation current, the design of the memory element is crucial.