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Hardware implementation of physically unclonable function (puf) in perpendicular STT MRAM

机译:垂直STT MRAM中物理不可克隆功能(puf)的硬件实现

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The pSTT MRAM array with stepped structure MTJ is fully integrated with standard 0.18 μm CMOS process. Using a low power etch process greatly improves the uniformity of MR and R. The bit pattern is randomized with a voltage method and a cost-effective field method; the latter can be incorporated into wafer processing. We showed the bit pattern is unpredictable under the same sub-critical stimulation, thus, practically unclonable. The Hamming Weight and inter-chip Hamming Distance are both ~50%, an evidence of sufficient uniqueness. A single embedded STT-MRAM PUF can cover many needs of security electronics.
机译:具有阶梯结构MTJ的pSTT MRAM阵列与标准的0.18μmCMOS工艺完全集成。使用低功率蚀刻工艺可大大提高MR和R的均匀性。后者可以并入晶圆加工中。我们显示,在相同的次临界刺激下,位模式是不可预测的,因此实际上是不可克隆的。汉明重量和芯片间汉明距离均约为50%,这是足够独特的证据。单个嵌入式STT-MRAM PUF可以满足安全电子设备的许多需求。

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