Impact of Nanocrystal(s) Location on C-V-t and I-V-t Characteristics of ncMOS Structures

摘要

We present the study of impact of the nanocrystal position and oxide layers thicknesses of the metal-insulator-semiconductor structure with nanocrystals embedded in the insulator layer on the time-dependent current-voltage and capacitance-voltage characteristics. The theoretical considerations are based on the developed numerical model of a double-barrier MOS structure. The dominant current path in the structure is analysed in respect to the nanocrystals charging/discharging processes.