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Supply-voltage optimization to account for process variations in high-volume manufacturing testing

机译:优化电源电压以解决大批量制造测试中的工艺变化

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In a high-volume manufacturing environment, it is difficult to set up test conditions, including supply-voltage levels, that can take into account the wide range of interdie process variations on a wafer. Test conditions that do not take into consideration these process variations can lead to either yield loss or poor quality control. In this work, we propose a method to identify supply-voltage levels to test semiconductor chips based on the process variations experienced by them, while also adapting these supply-voltage levels based on the chip locations on the wafer. For this purpose, we first identified various process zones on the wafer, based on frequencies of on-chip ring oscillators. Next we modeled the ring oscillator (RO) performance in terms of the variations in SPICE parameters using the design of experiments (DoE) method. The equation corresponding to the DoE model was solved for each process zone on the wafer in order to fit a set of independent SPICE parameters set for the corresponding zone. These independent SPICE parameters were then used to create an updated SPICE model for the ring oscillator corresponding to each zone, and these SPICE models were used to derive an appropriate supply-voltage level for each zone. The results were used to test 250 devices to identify chips that exhibit significant performance deviation compared to other chips from the same zone. Among these 250 devices, 89 belonged to the slow zone, 87 belonged to the medium-fast zone, and 74 belonged to the fast process zone. A total of seven devices from the medium-fast zone and nine devices from the fast zone showed performance deviations and they were successfully screened.
机译:在大批量制造环境中,很难设置测试条件(包括电源电压水平),这些条件可以考虑到晶圆上不同的制模间工艺差异。不考虑这些过程变化的测试条件可能会导致产量损失或质量控制不佳。在这项工作中,我们提出了一种基于半导体芯片经历的工艺变化来识别测试半导体芯片的电源电压电平的方法,同时还根据晶圆上芯片的位置调整这些电源电压电平。为此,我们首先根据片上环形振荡器的频率确定了晶圆上的各个工艺区域。接下来,我们使用实验设计(DoE)方法根据SPICE参数的变化对环形振荡器(RO)的性能进行了建模。对于晶片上的每个处理区域,求解与DoE模型相对应的方程式,以便拟合为相应区域设置的一组独立SPICE参数。然后使用这些独立的SPICE参数为与每个区域相对应的环形振荡器创建更新的SPICE模型,并使用这些SPICE模型为每个区域导出适当的电源电压电平。结果用于测试250个器件,以识别与来自同一区域的其他芯片相比,性能差异显着的芯片。在这250个设备中,有89个属于慢速区域,有87个属于中等快速区域,有74个属于快速处理区域。来自中快速区域的七个设备和来自快速区域的九个设备显示出性能偏差,并且已成功对其进行了筛选。

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