首页> 外文会议>IEEE Compound Semiconductor Integrated Circuit Symposium >VNA Based Measurements and Nonlinear Modeling for Efficient RF Circuit Design
【24h】

VNA Based Measurements and Nonlinear Modeling for Efficient RF Circuit Design

机译:基于VNA的有效射频电路设计测量和非线性建模

获取原文

摘要

All the players in RF industry are looking to develop high efficiency circuits, and are willing to invest heavily to achieve this target. Increasing power efficiency enables decreasing power consumption, thus reducing the use of the resources provided from the battery, to reduce the size of cooling systems, improve reliability, and ultimately reduce the electricity bill. For advanced design of RF power amplifier circuits, this requires a detailed knowledge of the optimal matching conditions that can leverage the best performances. If the RF designer can use an accurate transistor model for the simulation with a proper design method, then the design target will be hit. If there is no model available, alternative methods must be found in order to retain the best RF design. In the later case, for die or packaged transistor, two approaches are proposed. Both tend to secure the design flow of high efficiency amplifier when a complete compact transistor nonlinear model is not available.
机译:射频行业的所有参与者都在寻求开发高效电路,并愿意为实现这一目标进行大量投资。提高电源效率可以降低功耗,从而减少对电池提供的资源的使用,从而减小冷却系统的尺寸,提高可靠性并最终减少电费。对于RF功率放大器电路的高级设计,这需要能够充分利用最佳性能的最佳匹配条件的详细知识。如果RF设计人员可以使用正确的设计方法将准确的晶体管模型用于仿真,那么设计目标将会实现。如果没有可用的模型,则必须找到替代方法以保留最佳的RF设计。在后一种情况下,对于管芯或封装晶体管,提出了两种方法。当没有完整的紧凑型晶体管非线性模型时,两者都倾向于确保高效放大器的设计流程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号