Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier

摘要

Due to their low switching and conduction losses, Gallium Nitride (GaN) transistors are inherent candidates in hard-switched power converter topologies. The performance of five different GaN transistors in a Totem-Pole Power Factor Controlled (PFC) rectifier is compared by circuit simulation using transistor models parameterized by measurements with the double-pulse test. This is supplemented by calorimetric measurements to parameterize the models for the magnetic components. Simulation results show a possible efficiency of about 99.1 %.