Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs

摘要

For the first time, a new 900V, 10mOmega SiC MOSFET chip is fabricated, tested, and assembled in a >400A, half bridge power module, with only 1.25-2.5mOmega on-resistance at 25deg C, depending on the number of chips per switch position (i.e., eight or four, respectively). The SiC MOSFET chip had a measured breakdown > 1kV, and a specific RDS(ON) of 2.3mOmega cm2. The chips were then assembled in 16 power modules, and characterized up to 175deg C. Only a 40- 50% increase in RDS(ON) was measured with a temperature increase from 25deg C to 150deg C. With no knee voltage, conduction losses relative to comparably rated Si IGBT power modules can be reduced up to 70%.