S-band two stage low-noise-amplifier using single stub matching network

摘要

Two-stage low-noise-amplifier (LNA) using single stub matching networks for S-band operation is proposed, designed, and developed. The configuration aims to obtain high gain amplifier with minimum voltage standing wave ratio (VSWR). The proposed LNA consists of the first and the second stages using hetero junction FET NE3509M04 as active device where it has high associated gain. The proposed LNA is designed with planar structure on a Rogers RO4003C substrate. The planar structure is also used for obtaining good matching condition. The Agilent Design System (ADS) 2011.10 software is used for analysis of gain, VSWR, noise figure (NF) values and impedances. Characterizations of the designed LNA at 3 GHz are 1.71 of VSWRin, 3.07 of VSWRout, 6.17 dB of NF and 23.71 dB for gain which is lower 8.66 dB than simulated result.