Vertical Heterojunction Ge_0.92Sn_0.08/Ge GAA Nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest G_m,ext of 870 μ S/μ m

摘要

We demonstrate high performance vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 m V /dec, small DIBL of 24 m V/ V, and a high $mathrm{I}_{mathrm{ON}}/mathrm{I}_{mathrm{OFF}}$ ratio of ~ 106 are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high $mathrm{G}_{mathrm{m},mathrm{ext}}$ of ~870 $mu mathrm{S}/mu mathrm{m}$ and the best quality factor $mathrm{Q}=mathrm{G}_{mathrm{m},mathrm{ext}}mathrm{SS}_{mathrm{sat}}$ of 9.1 are obtained for all reported GeSn-based pFETs.