Wideband 80 W balanced power amplifier for ISM and LTE-bands

摘要

An 80 W balanced GaN-HEMT power amplifier for 2.45???2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis shows that a balanced amplifier is favorable because it simplifies measures to ensure electrical stability and allows better heat sinking.