Simulation and design trade-off analysis of 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions

摘要

Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power electronic systems. However, the transient characteristics and failure modes of these devices have to be further understood. This paper presents the Atlas TCAD simulation of a 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions. The simulated device is first validated against dc measurements of a physical device. The device is then simulated at various pulse current amplitudes using a 10 stage 100 μs PFN. In addition, a tradeoff study for the drift region and anode mesa width is performed.