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Wide bandgap (WBG) power devices and their impacts on power delivery systems

机译:宽带隙(WBG)功率设备及其对功率传输系统的影响

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Wide bandgap (WBG) power semiconductor devices have the capability to reach higher voltage, higher frequency and higher temperature compared with silicon based power devices. These capabilities have the potentials to revolutionize the way we deliver and manage power in the future. This paper reviews the WBG progress and their potential transformative impacts on low voltage, medium voltage and high voltage power delivery systems.
机译:与基于硅的功率器件相比,宽带隙(WBG)功率半导体器件具有达到更高电压,更高频率和更高温度的能力。这些功能有可能在未来改变我们交付和管理电力的方式。本文回顾了WBG的进展及其对低压,中压和高压输电系统的潜在变革性影响。

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