Stress direction and temperature detectable octagonal nMOSFET multi operation device

摘要

In this paper, we design, fabricate, and evaluate octagonal nMOSFET multi operation device for normal MOSFET operation, detection of 8 stress direction, and variation of temperatures. In previous works, one sensor device can detect only one physical or chemical phenomenon. If we get some sensing data, such as temperature, stress, and etc., more than two sensor devices must be implemented. According to stress detection, stress sensors reattach along stress direction for measurement, because most of the previous stress sensors can sense only one dimension. However, octagonal MOSFET is not necessary to adjust because this device has radial eight direction output terminals and can accommodate various sensing using these terminals. Furthermore, this device can also measure the variation of threshold voltage using these output terminals. For example, proposed device can get variety of temperatures due to the temperature characteristics of threshold voltage. As the results, we can realize that it can sense 8 stress directions and a variety of temperature.