Confirmation of SS=35µV/dec over 3 decades of drain current and hole accumulation effect on PN-body tied SOI super steep SS FET's

摘要

We checked the minimum subthreshold slope (SS) on the SOI based super steep FET's. It was 35μV/dec over 3 decades of the drain current on the PN-body tied SOI FET. It is the minimum value, ever reported. We also obtained the phenomena by the hole accumulation effect in the body with the pulsed measurement, which is a key for the appearance of the super steep SS on the SOI based FET. If it is true, the device needs improvement.