An S-band dual-channel receiver module based on the technology of TSV

摘要

In this paper, the technology of through silicon via (TSV) is applied to radio frequency (RF) receiver module. A grounded coplanar waveguide (GCPW) with TSV is proposed, through the simulation, and the improvement of TSV on RF transmission performance is studied, including TSV's aperture size, density, arrangement and so on. This paper also studies basic components model such as resistance, capacitance and inductance on the TSV motherboard. Then, an S-band dual-channel receiver module based on the technology of TSV is presented. Sixteen chips are integrated in the receiver module such as amplifier chips, power splitter chips, phase shifter chips and attenuator chips. The size of the final receiver module we proposed is 25mm×18mm×1.5mm, which is 2.5% of traditional RF receiver module, and the package is 8g, which is also 2.5% of the traditional RF receiver module.