A 330–500GHz 4th-harmonic mixer using schottiky diode

机译：使用肖特基二极管的A330–500 GHz第四谐波混频器

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The letter presents a fourth-harmonic mixer based on planar schottky diode working at 330-500GHz. The result of simulation predicts that conversion loses well below 14dB from 369GHz to 477GHz with 6 dBm of local oscillator power. Therefore, the good performance of mixers in wide bandwidth and low conversion loss provides designers with a better choice.

机译：这封信介绍了基于平面肖特基二极管的第四次谐波混合器，在330-500GHz工作。仿真结果预测，转换从369GHz到477GHz的转换远低于14dB至477GHz，其局部振荡器功率为6 dBm。因此，在宽带宽和低转换损失方面的混合器的良好性能提供了具有更好选择的设计者。

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来源
《IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications》|2016年|1-3|共3页
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Quanlong Li; Bo Zhang; Lisen Zhang; Dong Xing; Junlong Wang; Yong Fan;
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Mixers; Schottky diodes; Bandwidth; Frequency measurement; Gallium arsenide; Resonant frequency;

机译：混频器;肖特基二极管;带宽;频率测量;砷化镓;谐振频率;

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1. HIGH-CONVERSION-GAIN MILLIMETER-WAVE ×4 SUBHARMONIC MIXER WITH CASCODE 4th-HARMONIC GENERATOR [J] . Dan An, Sung Chan Kim, Woo Suk Sul, Microwave and optical technology letters . 2004,第6期

机译：CASCODE 4次谐波发生器的高转换增益毫米波次谐波混合器
2. GaAs/AIGaAs potential well barrier diodes: Novel diode for detector and mixer applications [J] . Mise Akura, Geoffrey Dunn, James Sexton, Physica status solidi . 2017,第10期

机译：GaAs / AIGaAs势阱势垒二极管：适用于检测器和混频器应用的新型二极管
3. A 220 GHz subharmonic mixer based on schottky diodes with an accurate terahertz diode model [J] . Zhang Yong, Zhao Wei, Wang Yunfei, Microwave and optical technology letters . 2016,第10期

机译：基于具有精确太赫兹二极管模型的肖特基二极管的220 GHz次谐波混频器
4. A 330–500GHz 4th-harmonic mixer using schottiky diode [C] . Quanlong Li, Bo Zhang, Lisen Zhang, IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications . 2016

机译：A330-500 GHz 4谐波混合器使用肖特基二极管
5. THE SINGLE-ENDED SEMICONDUCTOR DIODE MIXER: A MATHEMATICAL MODEL WHICH INCLUDES THE EFFECTS OF CIRCUIT RESISTANCE, DIODE CAPACITANCE, DC BIAS, AND CIRCUIT FILTERS [D] . BOWEN, CLARENCE EDWARD -1

机译：单端半导体二极管混频器：一种数学模型，其中包括电路电阻，二极管电容，直流偏置和电路滤波器的影响
6. Initial events in the formation of immune deposits in passive Heymann nephritis. gp330-anti-gp330 immune complexes form in epithelial coated pits and rapidly become attached to the glomerular basement membrane [O] . 1987

机译：被动性Heymann肾炎中免疫沉积物形成的初始事件。 gp330-anti-gp330免疫复合物在上皮包被的小孔中形成并迅速附着在肾小球基底膜上
7. Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer [O] . Wenjie Wang, Qian Li, Ning An, 2018

机译：8.87 THz肖特基屏障混合器二极管的制造与表征混合器

A 330–500GHz 4th-harmonic mixer using schottiky diode

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