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Numerical studies of synthesis of silicon nanoparticles in capacitively-coupled radiofrequency plasmas

机译:电容耦合射频等离子体中合成纳米硅的数值研究

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The formation and growth of silicon nanoparticles (SiNPs) (diameter <; 5 nm) in plasmas is being investigated due to many potential applications, including biomedical devices, renewable energy, and photovoltaics. Although experimental synthesis of SiNPs has had success in optimizing the process, the formation mechanisms are not yet fully understood. We have developed a two dimensional numerical model for synthesis of SiNPs in a capacitively-coupled radio frequency (RF) plasma which we have used to investigate mechanisms for particle growth and charging in Ar/He/SiH4 gas mixtures. Algorithms for the kinetics of nanoparticle formation were self-consistently embedded in a plasma hydrodynamics simulation to account for SiNP nucleation, growth, charging, and transport. A silicon hydride reaction mechanism was used to self-consistently calculate rates of nucleation and radical deposition on nanoparticle surfaces. Coagulation was calculated, along with nanoparticle charge distribution and transport. The electron current to particles was self-consistently calculated with rate coefficients provided by solutions of Boltzmann's equation for the electron energy distribution, which accounts for collisions with nanoparticles.
机译:由于许多潜在的应用,包括生物医学设备,可再生能源和光伏技术,正在研究等离子体中硅纳米粒子(SiNPs)(直径<; 5 nm)的形成和生长。尽管SiNPs的实验合成已成功地优化了工艺,但其形成机理仍未完全明了。我们已经开发了二维数值模型,用于在电容耦合射频(RF)等离子体中合成SiNPs,我们已使用该模型来研究Ar / He / SiH4气体混合物中粒子生长和带电的机制。将纳米粒子形成动力学的算法自洽地嵌入等离子体流体动力学模拟中,以说明SiNP的成核,生长,带电和传输。使用氢化硅反应机理自洽地计算纳米颗粒表面上的成核速率和自由基沉积速率。计算了凝结,以及纳米粒子的电荷分布和传输。用玻尔兹曼方程的电子能分布方程的解提供的速率系数自洽地计算出了粒子的电子电流,该方程解释了与纳米粒子的碰撞。

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