Prospects of Two-dimensional Material-based Field-Effect Transistors for Analog/RF Applications

摘要

With the recent experimental advancement in the fabrication of short channel two-dimensional material based field-effect transistors (2DM-FETs), it becomes essential to critically understand their performance for digital and analog applications. Although extensive research efforts in 2DM-FETs have demonstrated excellent switching performance for ultra-scale devices, there still exists an intensive demand to understand the RF and linearity performance for future high-frequency applications. Therefore, in this work, the RF and linearity performance metrics for two most emerging 2DMs, such as MoS2 and black phosphorous (BP), based FETs are examined and compared with ultra thin-body Si-MOSFET. This performance analysis is done using a self-developed quantum transport simulation based on self-consistent solutions of non-equilibrium Green's function approach and 2-D Poisson's equation. The results exhibit that monolayer BP-FET has a higher ON current and cutoff frequency, but degraded linearity figure-of-merits, such as higher order voltage intercepts and third order intermodulation distortions, could limit their use in radio-frequency integrated circuits. The Si-MOSFET has exhibited enhanced RF linearity and distortion performance metrics over 2DM-FETs and hence, promise excellent reliability for analog/RF circuit and sensor applications.