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Separation of the Secondary Electrons from the Gamma Radiation near the Surface of an Encapsulated Gamma Source Using a Magnetic Field

机译:使用磁场将二次电子从封装的伽马源表面附近的伽马辐射中分离出来

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Secondary electron generation on the surface of encapsulated gamma sources can play a large role in the dose measured near the surface of the encapsulation. An experiment has been designed so that the gamma and electron components of the radiation dose can be measured separately, near the surface of an encapsulated 137-CsCl source. This is done using an electromagnetic field to bend the surface electrons away from the gamma dose measurement. Simulations using the Monte Carlo transport code PHITS show that a magnetic field of at least 75mT is needed to obtain a pure gamma measurement near the source.
机译:封装的伽马源表面上的二次电子生成可在封装表面附近测得的剂量中发挥重要作用。设计了一个实验,以便可以在封装的137-CsCl源表面附近分别测量辐射剂量的伽马和电子成分。这是通过使用电磁场使表面电子弯曲远离伽马剂量测量来完成的。使用蒙特卡洛传输代码PHITS进行的仿真表明,至少需要75mT的磁场才能在源附近获得纯伽马测量值。

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