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Design, fabrication and testing of 17um pitch 640×480 uncooled infrared focal plane array detector

机译:17um间距640×480非冷却红外焦平面阵列探测器的设计,制造和测试

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Uncooled infrared focal plane array (UIRFPA) detectors are widely used in industrial thermography cameras, night vision goggles, thermal weapon sights, as well as automotive night vision systems. To meet the market requirement for smaller pixel pitch and higher resolution, we have developed a 17um pitch 640×480 UIRFPA detector. The detector is based on amorphous silicon (a-Si) microbolometer technology, the readout integrated circuit (ROIC) is designed and manufactured with 0.35um standard CMOS technology on 8 inch wafer, the microbolometer is fabricated monolithically on the ROIC using an unique surface micromachining process developed inside the company, the fabricated detector is vacuum packaged with hermetic metal package and tested. In this paper we present the design, fabrication and testing of the 17um 640×480 detector. The design trade-off of the detector ROIC and pixel micro-bridge structure will be discussed, by comparison the calculation and simulation to the testing results. The novel surface micromachining process using silicon sacrificial layer will be presented, which is more compatible with the CMOS process than the traditional process with polyimide sacrificial layer, and resulted in good processing stability and high fabrication yield. The performance of the detector is tested, with temperature equivalent temperature difference (NETD) less than 60mK at F/1 aperture, operability better than 99.5%. The results demonstrate that the detector can meet the requirements of most thermography and night vision applications.
机译:非制冷红外焦平面阵列(UIRFPA)检测器广泛用于工业热像仪,夜视镜,热武器瞄准器以及汽车夜视系统。为了满足更小像素间距和更高分辨率的市场需求,我们开发了17um间距640×480 UIRFPA检测器。该探测器基于非晶硅(a-Si)测微辐射热计技术,采用0.35um标准CMOS技术在8英寸晶圆上设计和制造读出集成电路(ROIC),该微测辐射热计采用独特的表面微加工技术在ROIC上整体制造在公司内部开发的过程中,将制造好的探测器与真空金属封装一起进行真空包装并进行测试。在本文中,我们介绍了17um 640×480检测器的设计,制造和测试。通过将计算和仿真与测试结果进行比较,将讨论探测器ROIC和像素微桥结构的设计折衷。将提出一种使用硅牺牲层的新型表面微加工工艺,该工艺与传统的采用聚酰亚胺牺牲层的工艺相比,与CMOS工艺更兼容,并具有良好的加工稳定性和较高的制造良率。测试了探测器的性能,在F / 1孔径下的等效温度差(NETD)小于60mK,可操作性优于99.5%。结果表明,该探测器可以满足大多数热成像和夜视应用的要求。

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