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Hydrothermal synthesis of heterostructured SnO_2/Sn_3O_4 film and its application in corrosion protection of stainless steel

机译:SnO_2 / Sn_3O_4异质结构薄膜的水热合成及其在不锈钢防腐中的应用

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We report the synthesis and characterization of an immobilized and heterostructured SnO_2/Sn_3O_4 semiconductor film as a photoanode for corrosion protection of 403 stainless steel (403SS) in a NaCI solution. The film was successfully prepared on FTO conductive glass substrates in an ethanol aqueous solution with SnCl_2, Na_3C_6H_5O_7 and NaOH via a facile hydrothermal method. For the preparation of the film, the solution was transferred to a Teflon-lined stainless steel autoclave after the FTO substrate was placed with the conducting side facing down in the autoclave. The autoclave was sealed and placed in an oven at 180°Cfor 12 h. After the hydrothermal reaction, the autoclave was naturally cooled down to room temperature, and then the FTO substrate attached with SnO_2/Sn_3O_4 film was taken out and rinsed with de-ionized water. The film was characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-visible spectroscopy and photoelectrochemical measurements.
机译:我们报告了固定化和异质结构的SnO_2 / Sn_3O_4半导体薄膜作为光阳极的合成和表征,该薄膜用于在NaCl溶液中腐蚀403不锈钢(403SS)。通过简便的水热法,在含有SnCl_2,Na_3C_6H_5O_7和NaOH的乙醇水溶液中,在FTO导电玻璃基板上成功制备了该膜。为了制备膜,在将FTO基材放置时,将导电面朝下放置在高压釜中,然后将溶液转移到衬有特氟龙的不锈钢高压釜中。密封高压釜,并将其在180℃的烘箱中放置12小时。水热反应后,将高压釜自然冷却至室温,然后取出附着有SnO_2 / Sn_3O_4膜的FTO基板,并用去离子水冲洗。该膜通过X射线衍射,拉曼光谱,扫描电子显微镜,UV-可见光谱和光电化学测量来表征。

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