TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

摘要

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET and Conventional MOSFET in terms of power gains. Also, significant improvement is observed in maximum available, maximum stable and maximum transducer power gain as we scale down the length of nanowire of GEWE-SiNW. Hence, provide its efficacy in high frequency CMOS applications.