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EVALUATION OF THE STRENGTH OF INTERFACE FOR MULTI-LAYERED MATERIALS IN PHOTONIC DEVICES

机译:光子设备中多层材料的界面强度评估

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Recent electronic device packaging, for instance, CSP has a bonded structure of IC chip and polymers, and delamination occurs frequently at the interface between IC and a resin. Furthermore, thermal stresses which are caused by a temperature variation in the bonding process of CSP and heat cycles for environment temperature will influence on the strength of interface. In the present paper, the delamination test for specimens with different thicknesses of an interlayer is carried out to investigate the strength of multi-layered joints, and the critical value for the intensity of singularity at delamination of interface is determined through a numerical analysis using a boundary element analysis. In experiment, a silicon wafer is joined with a silicon-on-sapphire (SOS) plate by a resin. The SOS is composed of silicon film and sapphire plate. The joining strength in silicon, resin and SOS joints with a rectangular bonding area is investigated. The bonded specimens are prepared under different cooling rate. Load is applied to the specimen so as to delaminate at the interfaces of silicon film and sapphire. Delamination occurs at the interface between silicon film and sapphire plate in the specimen. Nominal stress for delamination is about 2.23-3.59 MPa. From a comparison of the strength of joint for rapid and slow cooling conditions, it is found that the residual stress reduces the strength of joint. In the numerical analysis, the intensity of singularity at the corner of interface for a unit load is determined. The intensity of singularity at the corner of the interface is related to the intensities of singularity in the radial direction and on the angle from the side free surface. The critical intensity of singularity for delamination of the interface is obtained by multiplying the force at delamination. Then, the critical intensity of singularity is determined as 168 MPa·mm~(0.18) regardless of the thickness of silicon film.
机译:最近的电子设备封装,例如CSP具有IC芯片和聚合物的键合结构,并且在IC与树脂之间的界面上经常发生分层。此外,由CSP的键合过程中的温度变化和环境温度的热循环引起的热应力将影响界面强度。本文通过对不同夹层厚度的试样进行脱层试验,以研究多层接缝的强度,并通过数值分析确定了奇异强度在界面脱层时的临界值。边界元素分析。在实验中,硅片通过树脂与蓝宝石上的硅(SOS)板接合。 SOS由硅膜和蓝宝石板组成。研究了具有矩形结合面积的硅,树脂和SOS接头的结合强度。粘合的样品是在不同的冷却速率下制备的。将载荷施加到样品上,以便在硅膜和蓝宝石的界面处分层。在样品中的硅膜和蓝宝石板之间的界面处发生分层。用于分层的标称应力约为2.23-3.59 MPa。通过比较快速和慢速冷却条件下的接头强度,发现残余应力会降低接头的强度。在数值分析中,确定单位载荷在界面角处的奇异强度。界面拐角处的奇异强度与径向方向上的奇异强度以及与侧面自由表面的角度有关。通过乘以分层时的力,可以获得界面分层的奇异性的临界强度。然后,与硅膜的厚度无关,将奇异性的临界强度确定为168MPa·mm〜(0.18)。

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