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Advanced Cooling Designs for GaN-on-Diamond MMICs

机译:GaN-on-Diamond MMIC的高级冷却设计

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Under the DARPA-sponsored ICECool Applications program, a microchannel cooling system using a 50-50 ethylene glycol-water mixture was optimized for cooling a high-power GaN-on-Diamond Monolithic Microwave Integrated Circuit (MMIC). Automated multi-objective optimization of the microchannel passages yielded an optimized design with a predicted thermal resistance of 22.4 K·cm~2/kW at a pressure drop of only 121.4 kPa for an inlet temperature of 40°C. These values were corroborated by a coupled thermofluid analysis that included a detailed treatment of both the gate region and microchannel cooling geometry. Several versions of prototype coolers were fabricated, with one set consisting of pairs of coolers joined at their heated faces. These cooler pairs were used in heat exchange tests to characterize the average thermal resistance and the flow performance of the coolers. The performance testing results were consistent with the analytic predictions. Based on the analytical and experimental results, the system may be operated at inlet temperatures as high as 65°C without exceeding the transistor junction temperatures of 240 °C required for 10~6 hour mean-time-to -failure. The higher inlet temperature ameliorates system penalties associated with rejection of waste heat to ambient heat sinks.
机译:在DARPA赞助的ICECool应用程序计划下,优化了使用50-50乙二醇-水混合物的微通道冷却系统,以冷却大功率GaN-on-Diamond单片微波集成电路(MMIC)。微通道的自动化多目标优化产生了优化设计,在40°C的入口温度下,在仅121.4 kPa的压降下,预测的热阻为22.4 K·cm〜2 / kW。这些数值通过耦合热流体分析得到了证实,该分析包括对浇口区域和微通道冷却几何形状的详细处理。制造了几种版本的原型冷却器,其中一套包括在其受热面处连接的成对冷却器。这些冷却器对用于热交换测试,以表征冷却器的平均热阻和流动性能。性能测试结果与分析预测一致。根据分析和实验结果,该系统可以在最高65°C的入口温度下运行,而不会超过10-6小时平均故障时间所需的240°C的晶体管结温度。较高的入口温度改善了与废热排放到环境散热器相关的系统损失。

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