Optimization of structural and technological parameters of the field effect Hall sensor

机译：场效应霍尔传感器的结构和工艺参数的优化

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The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.

机译：提出了基于“绝缘体上硅”（SOI LSF）参数上形成的MIS结构的磁敏元件场霍尔传感器的优化结果。使用Silvaco软件仿真的结果定义了器件结构的主要特征。

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《International Conference on Advanced Technologies for Communications》|2015年|642-644|共3页
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V. Volchek; I. Lovshenko; V. Stempitsky; Dao Dinh Ha; A. Belous; V. Saladukha;
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Field Hall sensor; SOI; optimization; sensitive element;

机译：现场霍尔传感器SOI优化优化敏感元件;

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Optimization of structural and technological parameters of the field effect Hall sensor

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