A linear 5.9 GHz power amplifier for IEEE 802.11p applications

摘要

This paper presents a high-linearity and high-gain power amplifier for 802.11p standard. The power amplifier is fabricated using InGaP/GaAs HBT technology and packaged in a 5×5mm QFN. A stand-alone integrated passive device (IPD) chip is exploited as the output matching network in the same package. The measured power gain is 25.8 dB at 5 V supply. With a 27 Mbps IEEE 802.11p signal at the center frequency of 5.9 GHz, the power amplifier achieves -30 dB EVM at 22.5 dBm output power and fulfills the spectrum mask requirement of class C at 20 dBm output power.