Development of high-sensitive and wideband FET-based ultrasound receiver directly driven by piezoelectric effect

摘要

For high performance piezoelectrics, few technology options are currently available. Recent studies projected a novel sound pressure sensor [1][2] using a ferroelectrics-gated FET [3], but few were reported with an evident observation. In this study, we propose a structure possessing direct coupling of a PZT to a gate of a MOS-FET (PZT-FET). A minimum detectable sound pressure, a dynamic range and a -6 dB specific bandwidth is measured by experiments, and it was proved that the former two characteristics are improved against the current typical medical ultrasound transducer.